TGAN60N65F2DS
TGAN60N65F2DS insulated gate bipolar transistor is made by the second generation field cut-off effect process of trinno. 650V, low switching loss, suitable for a variety of temperature ranges, can work at 175 ℃, easy to operate in parallel, in line with ROHS standards, and has obtained JEDEC qualification certification. The product can be used in UPS, electric welding machine, inverter, solar energy and other fields.
了解 +
